The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Apr. 14, 2016
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Jong Hyun Ahn, Seoul, KR;
Wonho Lee, Seoul, KR;
Abstract
Provided is a method for manufacturing an inorganic material having a tensile stress, which includes: forming an inorganic stressor from an inorganic wafer made of an inorganic matter; forming an inorganic layer on the inorganic stressor; and etching a bulk inorganic matter at a lower portion of the inorganic stressor to generate an inorganic material having a tensile stress, wherein the inorganic layer has a tensile stress by etching the bulk inorganic matter to relieve a compressive stress applied to the inorganic stressor when the inorganic stressor is being formed. Therefore, FET and various circuits having higher charge mobility may be realized, and also, since characteristics may be maintained even when being applied to a plastic substrate, high performance flexible electronic device may be manufactured.