The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jan. 23, 2018
Applicants:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Denso Corporation, Kariya-shi, Aichi-ken, JP;

Inventors:

Takashi Kuno, Kariya, JP;

Hiroki Tsuma, Okazaki, JP;

Satoshi Kuwano, Nagakute, JP;

Akitaka Soeno, Toyota, JP;

Toshitaka Kanemaru, Gamagoori, JP;

Kenta Hashimoto, Aichi-ken, JP;

Noriyuki Kakimoto, Obu, JP;

Shuji Yoneda, Kariya, JP;

Assignees:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;

DENSO CORPORATION, Kariya-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41708 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 23/3171 (2013.01); H01L 24/05 (2013.01); H01L 29/45 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 21/32133 (2013.01); H01L 24/03 (2013.01); H01L 29/0696 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.


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