The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 09, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Hideki Okumura, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device has a drain region of a first conductivity type; a first semiconductor region of the first conductivity type on the drain region; a MOSFET on an upper part of the first semiconductor region; a source electrode configured to cover the MOSFET; and a pair of electrical connection units on both sides of the first semiconductor region, the electrical connection units being configured to electrically connect the drain region and the source electrode while being electrically insulated from the first semiconductor region.