The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jul. 19, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Sungeun Lee, Seoul, KR;

Junghyun Kim, Suwon-si, KR;

Jintaek Kim, Yongin-si, KR;

Kiwan Ahn, Seoul, KR;

Joosun Yoon, Seoul, KR;

Kwangyoung Choi, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3223 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134309 (2013.01); G02F 1/136213 (2013.01); G02F 1/136286 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); G02F 1/136227 (2013.01); G02F 2001/133357 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2202/10 (2013.01); H01L 27/3262 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device is capable of preventing damage to a signal line in a dehydrogenation process of a semiconductor layer and to a method of manufacturing the display device, the display device including: a substrate; at least one switching element on the substrate; a pixel electrode connected to the at least one switching element; a semiconductor layer on the substrate, the semiconductor layer providing a channel area of the at least one switching element; an insulating layer on the semiconductor layer; and a conductive layer connected to the semiconductor layer through a contact hole of the insulating layer. The insulating layer has a groove that overlaps the semiconductor layer and surrounds the conductive layer in the contact hole.


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