The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Sep. 09, 2016
Rayvio Corporation, Hayward, CA (US);
Douglas A. Collins, Hayward, CA (US);
Li Zhang, San Ramon, CA (US);
Faisal Sudradjat, Alameda, CA (US);
RayVio Corporation, Hayward, CA (US);
Abstract
Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.