The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Nov. 22, 2017
Canon Kabushiki Kaisha, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device has a silicon layer having a photoelectric conversion portion, a transfer electrode of a transfer portion disposed on the silicon layer, the transfer portion transferring a charge of the photoelectric conversion portion, and an insulator film having a first portion located between the transfer electrode and the silicon layer and a second portion located on the photoelectric conversion portion, the first portion and the second portion of the insulator film contain nitrogen, oxygen, and silicon, and the distance between the position where the nitrogen concentration shows the largest value in the second portion and the silicon layer is larger than the distance between the position where the nitrogen concentration shows the largest value in the first portion and the silicon layer.