The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Feb. 18, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wenbo Li, Beijing, CN;

Yanbing Wu, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/12 (2006.01); G02F 1/1337 (2006.01); G02F 1/1362 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); G02F 1/13624 (2013.01); G02F 1/133753 (2013.01); G02F 1/136213 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); G02F 2001/134345 (2013.01);
Abstract

An array substrate, a manufacturing method therefor, and a display device are provided. The array substrate comprises multiple pixel units, where at least one of the pixel units comprises a first subpixel electrode and a second subpixel electrode, the first subpixel electrode is electrically connected to a first charging thin-film transistor, and the second subpixel electrode is electrically connected to a second charging thin-film transistor. In same one pixel unit, the charging capacity of the second charging thin-film transistor is greater than the charging capacity of the first charging thin-film transistor.


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