The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jan. 12, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/02532 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/1054 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).