The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Feb. 21, 2017
Applicant:

United States of Americas As Represented BY the Administrator of Nasa, Washington, DC (US);

Inventors:

David J. Spry, Medina, OH (US);

Philip G. Neudeck, Olmstead Township, OH (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0805 (2013.01); H01L 28/75 (2013.01);
Abstract

A process of fabrication and the resulting microelectronic device that realizes metal features with larger lateral areas to maintain damage-free integrity over larger temperature ranges. The process and device enable the realization of highly durable extreme-environment microelectronic integrated circuits with increased functional capability, including realization of larger-area on-chip integrated metal-insulator-metal capacitor devices.


Find Patent Forward Citations

Spry, David. (2019). Larger-area integrated electrical metallization dielectric structures with stress-managed unit cells for more capable extreme environment semiconductor electronics (U.S. Patent No. 10490550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10490550

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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