The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Nov. 29, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung Wook Moon, Yongin-si, KR;

Min Sung Kim, Incheon, KR;

Eun Seok Song, Hwaseong-si, KR;

Kyoung Ho Kim, Hwaseong-si, KR;

Dong Chul Kim, Yongin-si, KR;

Jin Ho Kim, Suwon-si, KR;

Ji Hyun Lee, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); G09G 3/20 (2006.01); H01L 23/498 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G09G 3/2092 (2013.01); H01L 23/4985 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/585 (2013.01); G09G 2300/043 (2013.01); G09G 2310/0264 (2013.01); G09G 2330/021 (2013.01); G09G 2330/028 (2013.01); G09G 2330/06 (2013.01); H01L 24/17 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/1426 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor package includes an integrated circuit mounted on a substrate, a first power line disposed on or above the substrate and configured to transmit an operating voltage to the integrated circuit, and a second power line disposed on or above the substrate and configured to transmit a ground voltage to the integrated circuit, in which each of the first power line and the second power line has a first width, the first power line is spaced apart from the second power line by a first distance, thicknesses of each of the first power line and the second power line are less than or equal to 20 μm, and a ratio of the first width to the first distance is greater than 2.5.


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