The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jan. 24, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kazumasa Ito, Kawasaki, JP;

Seiichi Omoto, Yokkaichi, JP;

Takanobu Itoh, Yokkaichi, JP;

Ryota Nakanishi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); C23C 16/06 (2006.01); C23C 16/52 (2006.01); C23C 16/04 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/52 (2013.01); H01L 21/76879 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.


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