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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10490456 B1

PDFFull Text
Date of Patent:
Nov. 26, 2019

Filed:

Dec. 07, 2016

Semiconductor and method of fabricating the same

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Young Bae Kim, Cheongju-si, KR;

Kwang Il Kim, Cheongju-si, KR;

Assignee:

MagnaChip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/266 (2006.01); H01L 27/088 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823493 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/823418 (2013.01); H01L 27/088 (2013.01); H01L 29/0634 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/0886 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/063 (2013.01);
Abstract

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.

Find Patent Forward Citations

Kim, Young. (2019). Semiconductor and method of fabricating the same (U.S. Patent No. 10490456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10490456

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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