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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10490442 B1

PDFFull Text
Date of Patent:
Nov. 26, 2019

Filed:

Feb. 23, 2018

Method for blocking a trench portion

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Boon Teik Chan, Leuven, BE;

Ming Mao, Leuven, BE;

Peter De Schepper, Antwerp, BE;

Michael Kocsis, Leuven, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:

McDonnell Boehnen Hulbert & Berghoff LLP

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/033 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 21/027 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/0274 (2013.01); H01L 21/033 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31051 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 29/0649 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01);
Abstract

An example embodiment may include a method for blocking one or more portions of one or more trenches during manufacture of a semiconductor structure. The method may include (i) providing a substrate comprising one or more trenches, and a dielectric material under the one or more trenches, (ii) providing a first overlayer on the substrate, thereby filling the one or more trenches, the first overlayer having a planar top surface, a top portion of the first overlayer, comprising the top surface, being etchable selectively with respect to a condensed photo-condensable metal oxide, (iii) covering a first area of the top surface, situated directly above the one or more portions and corresponding thereto, with a block pattern of the condensed photo-condensable metal oxide, thereby leaving a second area of the top surface, having at least another portion of at least one of the trenches thereunder, uncovered.

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