The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Aug. 31, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Tsubasa Imamura, Kuwana Mie, JP;

Atsushi Takahashi, Yokkaichi Mie, JP;

Toshiyuki Sasaki, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31138 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes simultaneously flowing a first gas with a second gas containing a metal element to form a first opening in the second film and forming a third film containing the metal element on a side surface of the first opening. The method further includes forming a second opening in the first film below the first opening using the second film as a mask.


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