The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Mar. 22, 2018
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Katsuyoshi Harada, Toyama, JP;

Satoshi Shimamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/045 (2013.01); C23C 16/34 (2013.01); C23C 16/345 (2013.01); C23C 16/45527 (2013.01); C23C 16/45542 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/76224 (2013.01);
Abstract

There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern.


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