The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Apr. 21, 2015
Applicants:

Sangyong Yoon, Seoul, KR;

Donghun Kwak, Hwaseong-si, KR;

Kitae Park, Seongnam-si, KR;

Myung-hoon Choi, Suwon-si, KR;

Seung-cheol Han, Seoul, KR;

Inventors:

Sangyong Yoon, Seoul, KR;

Donghun Kwak, Hwaseong-si, KR;

Kitae Park, Seongnam-si, KR;

Myung-Hoon Choi, Suwon-si, KR;

Seung-Cheol Han, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1068 (2013.01); G06F 11/1072 (2013.01); G11C 11/5642 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 29/52 (2013.01); G11C 2013/0057 (2013.01);
Abstract

A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data.


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