The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jul. 26, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Hiroshi Sukegawa, Tokyo, JP;

Ikuo Magaki, Kawasaki, JP;

Tokumasa Hara, Kawasaki, JP;

Shirou Fujita, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/3418 (2013.01); H01L 27/11582 (2013.01);
Abstract

A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.


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