The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Aug. 01, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Keita Kimura, Fujisawa, JP;

Masahiko Iga, Yokohama, JP;

Yuichiro Suzuki, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 16/04 (2006.01); H01L 27/11578 (2017.01); H01L 27/1157 (2017.01); G11C 7/06 (2006.01); G11C 5/06 (2006.01); G11C 8/14 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/14 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 5/06 (2013.01); G11C 7/04 (2013.01); G11C 7/06 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/28 (2013.01); G11C 16/3445 (2013.01); H01L 27/1157 (2013.01); H01L 27/11578 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a memory string including a first select transistor, a first transistor adjacent to the first select transistor, and a memory cell transistor, a first select gate line, a first interconnect, a word line, a row decoder, a temperature sensor, and a control circuit. In the erase operation, the control circuit selects a first mode for applying a first voltage to the first interconnect when a temperature measured by the temperature sensor is equal to or higher than a first temperature, and selects a second mode for applying a second voltage to the first interconnect when the temperature measured is less than the first temperature.


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