The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 08, 2018
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Ryu Ogiwara, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5614 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0042 (2013.01); G11C 2013/0052 (2013.01); G11C 2013/0054 (2013.01); G11C 2211/563 (2013.01);
Abstract
According to one embodiment, a resistance change memory device comprises a memory cell array in which a plurality of resistance change storage elements each to store one of multiple resistance states as data represented in two or more bits are arranged, and a read unit to read the data of a selected one of the storage elements. In reading the data of the storage element, the read unit, selecting one at a time, applies multiple types of constant voltages to the storage element.