The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10490236 B1

Date of Patent:

Nov. 26, 2019

Filed:

Jun. 22, 2018

Semiconductor memory device with sense amplifier that is selectively disabled

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Hyung Sik Won, Chungcheongbuk-do, KR;

Hong Jung Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

James G Norman

Int. Cl.

CPC ...

G11C 7/08 (2006.01); G11C 5/14 (2006.01); G11C 7/12 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);

U.S. Cl.

CPC ...

G11C 7/08 (2013.01); G11C 5/147 (2013.01); G11C 7/1096 (2013.01); G11C 7/12 (2013.01); G11C 7/222 (2013.01); G11C 2207/229 (2013.01);

Abstract

A semiconductor memory device includes a sense amplifier control circuit configured to generate a first sense amplifier driving voltage application signal, a second sense amplifier driving voltage application signal and a third sense amplifier driving voltage application signal in response to an active signal, a precharge signal and a write pulse; and a sense amplifier driving voltage providing circuit configured to provide driving voltages to a sense amplifier through first and second driving voltage application lines during enable periods of the first to third sense amplifier driving voltage application signals.

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