The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jan. 23, 2019
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Chuang Qian, Santa Clara, CA (US);

Tsung-Ting Tsai, Cupertino, CA (US);

Cheng-Chih Hsieh, Santa Clara, CA (US);

Shyuan Yang, Burlingame, CA (US);

Ting-Kuo Chang, San Jose, CA (US);

Abbas Jamshidi Roudbari, San Jose, CA (US);

Shih Chang Chang, Cupertino, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); G09G 3/3266 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0871 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0242 (2013.01); G09G 2320/045 (2013.01); G09G 2320/064 (2013.01);
Abstract

A display may have an array of organic light-emitting diode display pixels operating at a low refresh rate. Each display pixel may include a drive transistor coupled in series with one or more emission transistors and a respective organic light-emitting diode (OLED). A semiconducting-oxide transistor may be coupled between a drain terminal and a gate terminal of the drive transistor to help reduce leakage during low-refresh-rate display operations. A silicon transistor may be further interposed between the semiconducting-oxide transistor and the gate terminal of the drive transistor. One or more capacitor structures may be coupled to the source terminal and/or the drain terminal of the semiconducting-oxide transistor to reduce rebalancing current that might flow through the semiconducting-oxide transistor as it is turned off. Configured in this way, any emission current flowing through the OLED will be insensitive to any potential drift in the threshold voltage of the semiconducting-oxide transistor.


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