The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Jun. 22, 2017
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventor:

Yoshinobu Asami, Isehara, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G09G 3/20 (2006.01); G09G 3/3225 (2016.01); G09G 3/36 (2006.01); G11C 7/12 (2006.01); H01L 27/12 (2006.01); G11C 11/412 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
G09G 3/2096 (2013.01); G09G 3/3225 (2013.01); G09G 3/3648 (2013.01); G11C 7/12 (2013.01); G11C 11/412 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/08 (2013.01); G09G 2320/043 (2013.01); G09G 2320/0626 (2013.01); G09G 2330/023 (2013.01); G09G 2360/12 (2013.01); G09G 2360/144 (2013.01); G11C 11/401 (2013.01);
Abstract

A novel semiconductor device or a highly reliable semiconductor device is provided. The on/off state of a transistor which functions as a switch for writing data is controlled using the potential of a potential hold portion. The potential of the potential hold portion is controlled using a plurality of capacitors, whereby both a positive potential and a negative potential can be held in the potential hold portion. Accordingly, deterioration of the transistor which functions as the switch for writing data can be prevented and the characteristics of the transistor can be maintained. Therefore, the highly reliable semiconductor device can be provided.


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