The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Dec. 22, 2016
Applicants:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Francois Roy, Seyssins, FR;

Marie Guillon, Paris, FR;

Yvon Cazaux, Grenoble, FR;

Boris Rodrigues, Grenoble, FR;

Alexis Rochas, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/486 (2006.01); H01L 27/146 (2006.01); H04N 5/374 (2011.01); G01S 7/491 (2006.01);
U.S. Cl.
CPC ...
G01S 7/4863 (2013.01); G01S 7/4914 (2013.01); H01L 27/1461 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14683 (2013.01); H04N 5/374 (2013.01); H01L 27/1463 (2013.01); H01L 27/14625 (2013.01); H01L 27/14643 (2013.01);
Abstract

A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.


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