The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jun. 25, 2019
Korea Institute of Science and Technology, Seoul, KR;
Unist(ulsan National Institute of Science and Technology), Ulsan, KR;
Seung Hyub Baek, Seoul, KR;
Tae Hyeon Kil, Seoul, KR;
Sanghyeon Kim, Seoul, KR;
Won Jun Choi, Seoul, KR;
Jeong Min Baik, Ulsan, KR;
Ki-Suk Lee, Ulsan, KR;
Korea Institute of Science and Technology, Seoul, KR;
UNIST (Ulsan National Institute of Science and Technology), Ulsan, KR;
Abstract
Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO) thin film in monoclinic VOcrystal phase by deposition of VOon oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VOthin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.