The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

May. 28, 2014
Applicant:

Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, Xinjiang, CN;

Inventors:

Shilie Pan, Urumqi, CN;

Hui Zhang, Urumqi, CN;

Min Zhang, Urumqi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/22 (2006.01); C30B 29/12 (2006.01); C01B 35/06 (2006.01); C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 15/22 (2006.01); C30B 15/30 (2006.01); C30B 17/00 (2006.01); C30B 19/02 (2006.01); C30B 19/06 (2006.01); C30B 19/08 (2006.01); C30B 19/10 (2006.01); G02B 1/08 (2006.01); G02B 5/30 (2006.01); G02B 27/28 (2006.01);
U.S. Cl.
CPC ...
C30B 29/22 (2013.01); C01B 35/066 (2013.01); C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/22 (2013.01); C30B 15/30 (2013.01); C30B 17/00 (2013.01); C30B 19/02 (2013.01); C30B 19/062 (2013.01); C30B 19/067 (2013.01); C30B 19/08 (2013.01); C30B 19/10 (2013.01); C30B 29/12 (2013.01); G02B 1/08 (2013.01); G02B 5/30 (2013.01); G02B 27/283 (2013.01);
Abstract

A preparation method and application of a NaBa(BO)F birefringent crystal, the crystal having a chemical formula of NaBa(BO)F, and belonging to a hexagonal crystal system, the space group being P6/m, and the lattice parameters comprising a=7.3490(6) Å, c=12.6340(2) Å, V=590.93(12) Å, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, n<n, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.


Find Patent Forward Citations

Loading…