The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Nov. 11, 2016
Applicants:

Nantong Licheng Biological Engineering Co., Ltd, Nantong, Jiangsu, CN;

Tianjin University, Tianjin, CN;

Inventors:

Junbo Gong, Tianjin, CN;

Qinqing Gu, Jiangsu, CN;

Kaifei Zhao, Tianjin, CN;

Jiangbo Li, Jiangsu, CN;

Baohong Hou, Tianjin, CN;

Qiuxiang Yin, Tianjin, CN;

Jingkang Wang, Tianjin, CN;

Yi Sun, Jiangsu, CN;

Shichao Du, Tianjin, CN;

Xin Pan, Jiangsu, CN;

Zhongshi Liu, Jiangsu, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07C 227/42 (2006.01); C07C 229/08 (2006.01);
U.S. Cl.
CPC ...
C07C 227/42 (2013.01); C07C 229/08 (2013.01); C07B 2200/13 (2013.01);
Abstract

The present invention discloses a γ-aminobutyric acid hemihydrate crystal, its molecular formula is CHNO.0.5HO. It also discloses a method of preparing a γ-aminobutyric acid hemihydrate crystal, including first adding crude γ-aminobutyric acid to water to prepare a γ-aminobutyric acid suspension at an initial concentration of 1.2-2.0 g/mL; then stirring the suspension at a constant temperature of 5-10° C. for 6-12 hours, followed by filtering and drying to obtain the γ-aminobutyric acid hemihydrate crystal. The γ-aminobutyric acid hemihydrate crystal is stable, does not easily absorb moisture and agglomerate, and is convenient for further processing and use. The crystal has a large main particle size, uniform particle size distribution, high bulk density, good flowability, and a purity of ≥99%. The preparation method of the crystal according to the present invention is simple, easy to operate, highly efficient and low in energy consumption, and is suitable for large-scale industrial production.


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