The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Aug. 20, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Matthias Steiert, Rosenheim, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G01L 9/00 (2006.01); H04R 31/00 (2006.01); H04R 19/04 (2006.01); H04R 19/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0072 (2013.01); B81B 3/0078 (2013.01); B81C 1/00158 (2013.01); B81C 1/00523 (2013.01); B81C 1/00666 (2013.01); G01L 9/0042 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0163 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/0323 (2013.01); B81C 2201/013 (2013.01); B81C 2201/014 (2013.01); H04R 2201/003 (2013.01);
Abstract

In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.


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