The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Feb. 28, 2018
Applicant:

Emagin Corporation, Hopewell Junction, NY (US);

Inventors:

Qi Wang, Hopewell Junction, NY (US);

Evan P. Donoghue, Hopewell Junction, NY (US);

Ilyas I. Khayrullin, Hopewell Junction, NY (US);

Tariq Ali, Hopewell Junction, NY (US);

Kerry Tice, Hopewell Junction, NY (US);

Amalkumar P. Ghosh, Hopewell Junction, NY (US);

Assignee:

eMagin Corporation, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 27/32 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/504 (2013.01); H01L 27/3213 (2013.01); H01L 27/3244 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5278 (2013.01); H01L 27/3211 (2013.01);
Abstract

A tandem Organic Light Emitting Diode (OLED) apparatus and method of fabricating the same, where the tandem OLED apparatus includes a buffer assisted charge generation layer having a junction of a p-type doped semiconductor layer and an n-type doped semiconductor layer, where a hole buffer layer and an electron buffer layer pair surrounding the junction of the p-type and n-type doped semiconductor layers. The OLED apparatus further includes a first OLED emissive layer and a second OLED emissive layer pair surrounding the buffer assisted charge generation layer, and a cathode and anode layer pair further surrounding the first and second OLED emissive layer pair.


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