logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10483435 B1

PDFFull Text
Date of Patent:
Nov. 19, 2019

Filed:

Jun. 22, 2018

Semiconductor light emitting device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Masakazu Takao, Kyoto, JP;

Mitsuhiko Sakai, Kyoto, JP;

Kazuhiko Senda, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Ngan V Ngo

Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/04 (2010.01); H01L 33/10 (2010.01); H01L 33/40 (2010.01); H01L 33/48 (2010.01); H01L 33/42 (2010.01); H01L 33/30 (2010.01); H01L 33/06 (2010.01); H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/0025 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/145 (2013.01); H01L 33/22 (2013.01); H01L 33/30 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

Find Patent Forward Citations

Takao, Masakazu. (2019). Semiconductor light emitting device (U.S. Patent No. 10483435). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10483435

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…