The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Dec. 05, 2017
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventors:
Jaewoo Choi, Seoul, KR;
Chungyi Kim, Seoul, KR;
Assignee:
LG Electronics Inc., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/02363 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.