The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jun. 18, 2018
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Takeshi Tanaka, Ibaraki, JP;
SCIOCS COMPANY LlMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
There is provided a nitride semiconductor epitaxial substrate, including: a substrate; a first nitride semiconductor layer formed on the substrate, as an electron transit layer in which two-dimensional electron gas exists; and a second nitride semiconductor layer formed on the first nitride semiconductor layer, as an electron supply layer, wherein the second nitride semiconductor layer includes a portion in which a hydrogen concentration is higher than that of the first nitride semiconductor layer and a difference of the hydrogen concentration from that of the first nitride semiconductor layer is 2×10cmor less.