The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Mar. 14, 2018
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Joachim Weyers, Hoehenkirchen, DE;
Katarzyna Kowalik-Seidl, Unterhaching, DE;
Andreas Schloegl, Ottobrunn, DE;
Enrique Vecino Vazquez, Munich, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. A transistor cell structure is provided in the semiconductor body. A gate contact structure includes a gate line electrically coupled to a gate electrode layer of the transistor cell structure, and a gate pad electrically coupled to the gate line. A gate resistor structure is electrically coupled between the gate pad and the gate electrode layer. An electric resistivity of the gate resistor structure is greater than the electric resistivity of the gate electrode layer.