The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Nov. 22, 2017
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Bingwu Liu, Ballston Spa, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Devices and methods of growing unmerged epitaxy for fin field-effect transistor (FinFet) devices are provided. One method includes, for instance: obtaining a wafer having at least one source, at least one drain, and at least one fin; etching to expose at least a portion of the at least one fin; forming at least one sacrificial gate structure; and forming a first layer of an epitaxial growth on the at least one fin. One device includes, for instance: a wafer having at least one source, at least one drain, and at least one fin; a first layer of an epitaxial growth on the at least one fin; at least one second layer of an epitaxial growth superimposing the first layer of an epitaxial growth; and a first contact region over the at least one source and a second contact region over the at least one drain.