The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Jul. 19, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Sun-Ki Min, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 21/033 (2006.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0334 (2013.01); H01L 21/28114 (2013.01); H01L 21/762 (2013.01); H01L 23/53295 (2013.01); H01L 29/0649 (2013.01); H01L 29/4232 (2013.01); H01L 29/42376 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device including a first insulating interlayer on a substrate; a second insulating interlayer on the first insulating interlayer; a gate structure extending through the first insulating interlayer and the second insulating interlayer on the substrate, a lower portion of the gate structure having a first width, and an upper portion of the gate structure having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof; and a spacer structure on a sidewall of the gate structure, a width of an upper portion of the spacer structure being less than a width of a lower portion of the spacer structure.


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