The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Nov. 02, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11548 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/0688 (2013.01); H01L 27/11519 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract
A three-dimensional semiconductor device is provided as follows. A substrate includes a contact region, a dummy region, and a cell array region. A stack structure includes electrodes vertically stacked on the substrate. The electrodes are stacked to have a first stepwise structure on the contact region and a second stepwise structure in the dummy region. Ends of at least two adjacent electrodes in the second stepwise structure have first sidewalls vertically aligned so that horizontal positions of the first sidewalls are substantially the same.