The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 16, 2018
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/232 (2006.01); H01L 27/146 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1461 (2013.01); H01L 27/14607 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 5/232122 (2018.08); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H04N 5/3696 (2013.01);
Abstract
The disclosure is related to a solid-state image pickup device in which an impurity concentration has a first peak including a local minimum value in a depth direction of a semiconductor substrate in an isolation region arranged between adjacent photoelectric conversion portions, the impurity concentration has a second peak including a local maximum value in the depth direction in a charge accumulation region of the adjacent photoelectric conversion portions, and a region that indicates the first peak and a region that indicates the second peak have a portion overlapped in a direction perpendicular to the depth direction.