The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Feb. 06, 2017
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/20 (2006.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H01L 31/12 (2006.01); H04N 5/232 (2006.01); H04N 5/33 (2006.01); G01S 17/08 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); G01S 17/08 (2013.01); H01L 27/146 (2013.01); H01L 27/1461 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 31/10 (2013.01); H01L 31/102 (2013.01); H01L 31/12 (2013.01); H04N 5/232 (2013.01); H04N 5/33 (2013.01);
Abstract
A photoelectric conversion element according to one embodiment of the disclosure includes a photoelectric conversion region inside a semiconductor layer. The photoelectric conversion region includes a region in which a depletion region is to be formed by voltage application to the semiconductor layer. The semiconductor layer has a first main surface and a second main surface. The depletion region converts light into a photoelectron, in which the light enters from side on which the first main surface is disposed. The photoelectric conversion element further includes an isoelectronic trap region in the region in which the depletion region is to be formed.