The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Oct. 18, 2017
Applicant:
Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-Do, KR;
Inventors:
Gwi-Deok Ryan Lee, Suwon-si, KR;
Tae Yon Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/374 (2011.01); H04N 5/376 (2011.01); H04N 5/378 (2011.01); H04N 5/353 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 5/353 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 5/3765 (2013.01); H04N 5/37452 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract
An image sensor includes a light-sensing element that generates charge in response to incident light, a storage diode formed in a substrate, wherein the storage diode stores the charge generated by the light-sensing element, a floating diffusion region formed in a top surface of the substrate and spaced apart from the storage diode, and a transfer gate at least partially buried under the top surface of the substrate, wherein the transfer gate controls the transfer of the charge from the storage diode to the floating diffusion region.