The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Mar. 05, 2018
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventor:
Zih-Song Wang, Taoyuan, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 21/765 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/765 (2013.01); H01L 27/11519 (2013.01); H01L 23/552 (2013.01);
Abstract
A non-volatile memory structure including memory cells, at least one isolation layer, and at least one shield electrode is provided. The memory cells are disposed on a substrate. The isolation layer is located between the memory cells. The shield electrode is disposed on the isolation layer and electrically connected to a source line.
Wang, Zih-Song. (2019). Non-volatile memory structure and manufacturing method thereof (U.S. Patent No. 10483271). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10483271
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile