The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Apr. 10, 2018
Applicants:

Tohoku University, Shendai-shi, Miyagi, JP;

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Mitsumasa Koyanagi, Sendai, JP;

Tetsu Tanaka, Sendai, JP;

Takafumi Fukushima, Sendai, JP;

Kang-Wook Lee, Sendai, JP;

Assignees:

TOHOKU UNIVERSITY, Sendai-shi, JP;

TOSHIBA MEMORY CORPORATION, Toshiba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11013 (2013.01); H01L 2224/1131 (2013.01); H01L 2224/11848 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06593 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a metal column that extends in a stretching direction; a polymer layer that surrounds the metal column from a direction crossing the stretching direction; and a guide that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture containing metal particles and polymers in a guide; and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column that stretches in a stretching direction of the guide from the metal particles.


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