The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Aug. 17, 2016
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Andrea Paleari, Brugherio, IT;

Antonella Milani, Cusano Milanino, IT;

Lucrezia Guarino, Milan, IT;

Federica Ronchi, Bellusco, IT;

Assignee:

STIMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 23/525 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 24/00 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02181 (2013.01); H01L 2224/02315 (2013.01); H01L 2224/02333 (2013.01); H01L 2224/02372 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/351 (2013.01);
Abstract

In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peripheral portions. The method includes: providing a sacrificial layer to cover the marginal regions of the underlying layer, providing the metallizations while the marginal regions of the underlying layer are covered by the sacrificial layer, and removing the sacrificial layer so that the marginal regions of the underlying layer extend facing the peripheral portions in the absence of contact interface therebetween, thereby avoiding thermo-mechanical stresses.


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