The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Oct. 18, 2018
Applicant:

Waqas Khalid, Berkeley, CA (US);

Inventor:

Waqas Khalid, Berkeley, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01J 9/02 (2006.01); H01L 23/525 (2006.01); H01J 1/304 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01J 1/3044 (2013.01); H01J 9/025 (2013.01); H01L 21/76886 (2013.01); H01L 23/525 (2013.01); H01L 2924/0002 (2013.01); Y02B 10/12 (2013.01);
Abstract

A method for manufacturing of a device (-) comprising a substrate () comprising a plurality of sets of nanostructures () arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing () the substrate () having a first () face, the substrate having an insulating layer () comprising an insulating material arranged on the first face () of the substrate forming an interface () between the insulating layer and the substrate; providing () a plurality of stacks () on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer () comprising a first conductive material and a second conductive layer () comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating () the substrate having the plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on the second conductive material; heating () the substrate having the plurality of stacks () arranged thereon in an atmosphere such that nanostructures () are formed on the second layer (); wherein the insulating material and the first conductive material are selected such that during the heating steps, the first conductive material interacts with the insulating material to form an electrically conductive portion () within the insulating layer () below each of the stacks (), wherein the electrically conductive por tion comprises a mixture of the first conductive material and the insulating material and/or reaction adducts thereof.


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