The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jun. 30, 2017
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Yung Jun Kim, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 23/528 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/28282 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/11575 (2013.01);
Abstract
Provided herein is a semiconductor memory device. The semiconductor memory device may include channel layers protruding away from a substrate. The semiconductor memory device may include a plurality of pads respectively coupled to the channel layers. The widths of the pads may or may not be increased depending on a bending of the channel layers.
Kim, Yung. (2019). Semiconductor memory device having pads of varying widths (U.S. Patent No. 10483203). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10483203
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile