The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 30, 2018
Renesas Electronics Corporation, Tokyo, JP;
Takayuki Igarashi, Tokyo, JP;
Takuo Funaya, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CLand a wiring Mformed on an interlayer insulator IL, a wiring Mformed on an interlayer insulator IL, and a coil CLand a wiring Mformed on the interlayer insulator IL. Moreover, a distance DMbetween the coil CLand the wiring Mis longer than a distance DMbetween the coil CLand the wiring M(DM>DM). Furthermore, the distance DMbetween the coil CLand the wiring Mis set to be longer than a sum of a film thickness of the interlayer insulator ILand a film thickness of the interlayer insulator IL, which are positioned between the coil CLand the coil CL. In this manner, it is possible to improve an insulation withstand voltage between the coil CLand the wiring Mor the like, where a high voltage difference tend to occur. Moreover, a transformer formation regionA and a seal ring formation regionC surrounding a peripheral circuit formation regionB are formed so as to improve the moisture resistance.