The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Dec. 14, 2016
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Abdenacer Ait-Mani, Saint-Egrève, FR;
Bertrand Chambion, Pontcharra, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3738 (2013.01); H01L 21/02005 (2013.01); H01L 21/0243 (2013.01); H01L 21/02664 (2013.01); H01L 21/76837 (2013.01); H01L 21/76877 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01);
Abstract
This method comprises the steps of: a) forming a set of first trenches on the first surface of the wafer; b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches; c) filling the first trenches with a first material having a CTE α; d) filling the second trenches with a second material having a CTE α, and verifying α>αor α<αdepending on whether the first material verifies α>αor α<α.