The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Dec. 11, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Aniruddha Joi, Fremont, CA (US);

Yezdi Dordi, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76858 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.


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