The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10483129 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 19, 2019

Filed:

Sep. 27, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jing Feng, Beijing, CN;

Seung Jin Choi, Beijing, CN;

Fangzhen Zhang, Beijing, CN;

Wusheng Li, Beijing, CN;

Zhijun Lv, Beijing, CN;

Ce Ning, Beijing, CN;

Jiushi Wang, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/027 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); G03F 7/00 (2006.01); H01L 27/12 (2006.01); G03F 7/38 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/47635 (2013.01); G03F 7/0035 (2013.01); G03F 7/20 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/321 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01);
Abstract

The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.


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Feng, Jing. (2019). Method for roughening the surface of a metal layer, thin film transistor, and method for fabricating the same (U.S. Patent No. 10483129). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10483129

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