The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
May. 20, 2015
Applicant:
Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 23/04 (2006.01); C30B 23/06 (2006.01); C30B 29/66 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 23/04 (2013.01); C30B 23/066 (2013.01); C30B 25/04 (2013.01); C30B 25/186 (2013.01); C30B 29/406 (2013.01); C30B 29/66 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/0265 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02516 (2013.01); H01L 21/02639 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01);
Abstract
The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in: