The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Sep. 13, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Daisuke Hagishima, Meguro, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 27/11565 (2017.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/1037 (2013.01); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); H01L 27/11565 (2013.01); H01L 29/7883 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a stacked body including a first stacked region, and a first structure body. The first stacked region includes first and second selection gate electrodes, first electrodes arranged in a first direction and provided between the first and second selection gate electrodes, second electrodes arranged in the first direction and provided between the second selection gate electrode and the first electrodes, and third electrodes arranged in the first direction and provided between the first electrodes and the second electrodes. A first spacing between two mutually-adjacent first electrodes is wider than a third spacing between two mutually-adjacent third electrodes. A second spacing between two mutually-adjacent second electrodes is wider than the third spacing.


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