The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Apr. 03, 2013
Applicant:

Silicon Basis Ltd, Bristol, GB;

Inventor:

Robert Charles Beat, Bristol, GB;

Assignee:

PLATIPUS LIMITED, Bristol, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/419 (2006.01); G11C 5/02 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/025 (2013.01); G11C 11/412 (2013.01);
Abstract

The present application relates to an improved static random access memory (SRAM) device having a plurality of storage cells and a separate read/write circuit. Each of the plurality of storage cells is connected to a read/write data node of the read/write circuit by a dedicated connection, and an access switch which permits read/write access to the storage cell. The dedicated connection exhibits a greater capacitance than the read/write data node of the read/write circuit, such that the primary read mechanism of the SRAM is charge equalization. The SRAM write data connection to the read/write node of the read/write circuit, to permit data to be written to the plurality of storage cells. Write assist techniques are disclosed which assist writing of a '1' to the plurality of storage cells.


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